| PART |
Description |
Maker |
| 64001-1400 19023-0012 CT-4071-1R 19130-0044 19130- |
Assorted Non-Insulated and PVC Insulated Quick Disconnect, Ring, Spade and Butt Splice Terminals
|
MolexKits
http://
|
| 19037-0004 64001-1400 19038-0007 19039-0007 19033- |
PVC and Nylon Insulated Bullet Snap Plug and Receptacle, and Insulated Double Bullet Snap Coupler and Non-Insulated Bullet Snap Plug and Receptacle
|
MolexKits
|
| PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BCR16A BCR16B BCR16E BCR16C |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MEDIUM POWER USE A B C : NON-INSULATED TYPE E : INSULATED TYPE GLASS PASSIVATION TYPE
|
Infineon Technologies AG
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| 1900500010 0190050010 C-2265 SD-19005-001 |
InsulKrimp Fully Insulated Female Quick
InsulKrimp垄芒 Fully Insulated Female Quick
|
Molex Electronics Ltd.
|
| IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| RM20CA-XXS RM20C1A-XXS RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE 中功率，高频率使用的绝缘
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PM300CVA06005 PM300CVA060 PM300CVA06009 |
FLAT-BASE TYPE INSULATED PACKAGE
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
|
| PS21342-N |
DIP - IPM
MITSUBISHI SEMICONDUCTOR Power Module TRANSFER-MOLD TYPE INSULATED TYPE
MITSUBISHI SEMICONDUCTOR TRANSFER-MOLD TYPE INSULATED TYPE
Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
